代表的著書・出版実績
元 株式会社東レリサーチセンター 代表取締役社長
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40年以上の半導体・材料分析研究開発経験
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元 東レリサーチセンター代表取締役社長
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Springerより専門書出版
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ラマン・CL・PL分光法の専門家
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技術顧問・技術セミナー・共同研究に対応
Springerより出版した専門書
＜原著論文リスト＞
Masanobu Yoshikawa et al.
Stress characterization of crystal junction of a mosaic diamond substrate (an approximately 4 cm2) using near-field optical Raman microscope
Journal of Raman spectroscopy, 57, 3, 473-480(2026).
Pages 473-480
Masanobu Yoshikawa et al.
Anisotropic stress observation of 4H-SiC trench metal-oxide semiconductor field-effect transistor test structures by scanning near-field optical Raman microscope
Journal of Raman spectroscopy,
1-7(2024)
Advanced Optical Spectroscopy Techniques for Semiconductors: Raman, Infrared, and Cathodoluminescence Spectroscopy
Springer, 2023/3/24
Masanobu Yoshikawa, Masataka Murakami, Yasuhiko Fujita
Characterization of inhomogeneity at edges of graphene oxide films using tip-enhanced Raman spectroscopy
Journal of Raman spectroscopy,
1-8 (2022)
Masanobu Yoshikawa, Masataka Murakami, Yasuhiko Fujita
Journal of Raman spectroscopy,
1-7 (2022)
吉川 正信
ラマン分光法による最先端工業材料の評価
分光研究68, No.6, 2019
Masanobu Yoshikawa, Yasuhiko Fujita, and Masataka Murakami
Stress Characterization of Interface between Thermal Oxide and 4H-SiC Epitaxial Layer using Near-field Optical Raman Microscopy
Applied Spectroscopy
Vol. 73(10) 1193–1200, 2019
J. Sameshima, and M. Yoshikawa
An effect of residual gas component on detected secondary ions during TOF-SIMS depth profiling and a method to estimate contained component
SURFACE AND INTERFACE ANALYSIS, 50, 8, p.802-806, (2018)
Masanobu Yoshikawa
Infrared spectroscopy and Raman spectroscopy of semiconductor
Encyclopedia of Analytical Chemistry (John Wiley & Sons Ltd), 2018
Masanobu Yoshikawa, Keiko Inoue, Junichiro Sameshima, and Hirohumi Seki
Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
Materials Science Forum Vol. 924, pp 273-276, 2018
Hirofumi Seki, Masanobu Yoshikawa, Takuma Kobayashi, Tsunenobu Kimoto, and Yukihiro Ozaki
Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy
Applied Spectroscopy, 2016, Vol. 71(5) 911–918
Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki, and Tsunenobu Kimoto
Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method
Applied Spectroscopy, 2016, Vol. 70(7) 1209–1213
M. Yoshikawa
Abnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline Diamond
Materials Science Forum Vol. 858, pp 1158-1161, 2015
M. Yoshikawa, H. Seki, K. Inoue, Y. Nanen, T. Kimoto
Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and
Cathodoluminescence Spectroscopy
Applied Spectroscopy, 2014, Vol. 68(10) 1176–1180
M. Yoshikawa, K. Inoue, J. Sameshima, and H. Seki
Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate By a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy
Materials Science Forum 924, 273-276 ( 2018).
M.Yoshikawa, H. Seki, T. Yamane, Y. Nanen, M. Kato, T. Kimoto
Abnormal Behavior of LO phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate by Fourier Transform Infrared (FT-IR) Spectroscopy
Applied Spectroscopy, Vol.67(5), p.542-545, 2013
M. Yoshikawa, K. Inoue, H. Seki, Y. Nanen, M. Kato, and T. Kimoto
Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100)M, and (11-20) A faces by cathodoluminescence spectroscopy
Applied Physics Letters, 102, 051612 (2013)
M. Yoshikawa, S. Ogawa, K. Inoue, H. Seki, Y. Tanahashi, H. Sako, K.Matsuda, Y. Nanen, M. Kato, and T. Kimoto
Characterization of Silicon Dioxide Films on 4H-SiC Si (0001) Face by Cathodoluminescence Spectroscopy and X-ray Photoelectron Spectroscopy
Applied Physics Letters, 100, 082105 (2012)
M. Yoshikawa, H. Seki, K. Inoue, Y. Tanahashi, H. Sako, Y. Nanen, M. Kato, and T. Kimoto
Characterization of Silicon Dioxide Films on 4H-SiC Si(0001) Face by Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
Applied Spectroscopy, Vol.65(5), p.543-548, 2011
吉川 正信
紫外励起近接場ラマン顕微鏡によるシリコン半導体の二次元応力評価
分析化学, 第60巻, 第7号, p.533-541, 2011
吉川 正信、三輪 優子
白色LEDの劣化解析
月刊ディスプレイ, 6月号, 2010
吉川 正信
白色LEDの劣化解析
月刊ディスプレイ, 4月号, 2010
Naoki Muraki, Takeshi Miyamoto, and Masanobu Yoshikawa
Depth profile analysis of organic multi-layer device with nanometer resolution using surface-enhanced Raman spectroscopy
Chem. Phys. Lett., 499, p.158-160, 2010
Naoki Muraki, and Masanobu Yoshikawa
Characterization of the interface between metal and tris (8-hydroxyquinoline) aluminum using surface-enhanced Raman scattering with glass cap encapsulation
Chem. Phys. Lett., 496, p.91-93, 2010
R. Sugie, M. Takeshi, Masanobu Yoshikawa, et al
Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors
Jpn. J. Appl. Phys., 49, p.04DP15.1-04DP15.4, 2010
M. Yoshikawa, M. Murakami, H. Ishida and H. Harima1 (1:Kyoto Institute of Technology)
Characterizing nanometer-sized V-defects in InGaN single quantum well films by high-spatial-resolution cathodoluminescence spectroscopy
Applied Physics Letters, 94, 131908 (2009)
M. Yoshikawa, et al
Characterization of V-defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
Materials Science Forum, Vols. 600-603, p.1305-1308 (2009)
Keiko Inoue, Takeshi Nakagawa, Masanobu Yoshikawa, Noriyuki Hasuike, and Hiroshi Harima
Characterization of Nanometer-sized ZnO by Raman and Cathodoluminescence Spectroscopies
Materials Science Forum, Vols. 600-603, p. 1357-1359, 2009
Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, and Hiroshi Harima,
Correlation Between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
Materials Science Forum, Vols. 600-603, p.1309-1312, 2009
Takeshi Mitani, Ryo Hattori, and Masanobu Yoshikawa
Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
Materials Science Forum, Vols. 600-603, p.615-618, 2009
Ryuichi Sugie, Masanobu Yoshikawa, Shin Harada, and Yasuo Namikawa
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
Materials Science Forum, Vols. 600-603, p.353-356, 2009
M. Yoshikawa
Stress characterization of nano-polycrystalline silicon films and silicon and by near-field and far-field Raman Microscope, using UV resonant Scattering
Trends in nanotechnology, 2008
M. Yoshikawa, et al
Characterization of V-defects in InGaN single quantum well films at the nanometer level by high-spatial-resolution cathodoluminescence spectroscopy
Applied Spectroscopy, 62, 86 (2008)
M. Yoshikawa, et al
Characterization of ZnO nanoparticles by resonant Raman scattering and cathodoluminescence spectroscopies
Applied Physics Letters, 92, 113115 (2008)
M. Yoshikawa, et al
Highly sensitive detection of the near-filed Raman scattered light from strained Si/SiGe heterostructures by scanning near-field optical Raman microscope, using ultraviolet resonant Raman scattering
Applied Physics Letters, 92, 091903 (2008)
M. Yoshikawa, et al
Stress Characterization of Si by Near-field Raman Microscope, using Resonant Scattering
Applied Spectroscopy, 62, 86 (2008)
M. Yoshikawa, et al
Characterization of Si nanostructures using a noncontact mode, scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering
Applied Physics Letters, 91, 131908 (2007)
M. Yoshikawa, et al
Stress characterization of Si by a scanning Near-field optical Raman microscope with spatial resolution and with penetration depth at the nanometer level, using resonant Raman scattering
Jpn. J. Appl. Phys., 45, L486 (2006)
M. Yoshikawa, et al
Defect characterization of Si-doped GaN films by a scanning near-field optical microscope –induced photoluminescence using an ultra violet laser and by high spatial resolution cathodoluminescence spectroscopy
Applied Physics Letters, 88, 161905 (2006)
Ryuichi Sugie, Masanobu Yoshikawa, et al
Investigation of stress-induced defects in shallow trench isolation by cathodoluminescence and Raman spectroscopies
J. Appl. Phys., 100, p.064504-064504-5, 2006
M. Yoshikawa, et al
Characterization of Si nano-polycrystalline films at the nanometer level using Resonant Raman scattering
Journal of Applied Physics, 98, 063531 (2005)
M. Yoshikawa, et al
Resonant Raman scattering from N-doped and Si-doped diamondlike amorphous carbon films
Phys. Rev. B, 69, 045410R (2004)
Naoki Muraki, N. Matoba, T. Hirano, M. Yoshikawa
Determination of thermal stress distribution in a model microelectronic device encapsulated with alumina filled epoxy resin using fluorescence spectroscopy
Polymer, 43, p.1277-1285, 2002
M. Yoshikawa, et al
Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy
Journal of Applied Physics, vol.92, No.12, 7153 (2002)
M. Yoshikawa, et al
Resonant Raman scattering from buried AlxGa1-xN(x<0.17) layers in (Al, Ga, In)N heterostructures
Journal of Applied Physics, 87, 2583 (2000)
M. Yoshikawa, et al
Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Journal of Applied Physics, 86, 4400 (1999)
M. Yoshikawa, et al
Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy
Journal of Applied Physics, 51, 1693 (1998)
吉川 正信、岩上 景子
ラマン分光法によるダイヤモンド状炭素膜の構造評価
表面技術, 49, 80 (1998)
M. Yoshikawa, et al
Characterization of Fluorine-doped Silicon Dioxide Film by Raman Spectroscopy
Thin Solid Films, 310, 167 (1997)
吉川 正信、永井 直人
最先端半導体の光計測 半導体材料の分析技術の現状について
光技術コンタクト, 35, p.554-572, 1996
吉川 正信、石田 英之
ラマン分光法による表面・薄膜の構造評価
表面技術, 47, 18 (1996)
M. Yoshikawa, et al
Characterization of Anisotropic Stress around Si Trenches by Polarized Raman Spectroscopy
Journal of Applied Physics, 78, 941 ( 1995)
M. Yoshikawa, et al
Raman scattering from nanometer-sized diamond
Applied Physics Letters, 67, 694 (1995)
吉川 正信、石田 英之
第１章 試料全体の分析による平均的情報 振動スペクトル分析 ラマン分光分析
粉体工学会誌, 32, p.486-491, 1995
M. Yoshikawa, et al
Determination of Anisotropic Refractive Indices of A Single-Crystal Organic Thin Film by Attenuated Total Reflection Raman Spectroscopy
Applied Physics Letters, 64, 2096(1994)
M. Yoshikawa, et al
Raman Scattering from Diamond Particles
Applied Physics Letters, 62, 3114 (1993)
吉川 正信、石田 英之
特集 光技術者のための表面分析入門 ラマン分光と表面
O plus E, 162, 103-108, 1993
M. Yoshikawa, et al
Raman Scattering from sp2 Carbon Clusters
Phys. Rev. B, 46, 7169 (l992)
M. Yoshikawa, et al
Study of Crystallographic Orientations in the Diamond Film on the (100)Surface of Cubic Boron Nitride Using a Raman Microprobe
Applied Physics Letters, 58(13), 1387 (199l)
M. Yoshikawa, et al
Study of Crystallographic Orientations in the Diamond Film on Cubic Boron Nitride Using Raman Microprobe
Applied Physics Letters, 57(5), 428 (l990)
M. Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
Science and Technology of New Diamond, 1, 445 (1990)
M. Yoshikawa
Raman Spectra of Diamondlike Amorphous Carbon Films
NEW DIAMOND, 1, 54 (1990)
吉川 正信
ラマン分光法によるダイヤモンド膜の評価
日本材料科学会, 28, 133 (1990).
I. Nagai, A. Ishitani, H. Kuroda, Masanobu Yoshikawa, N. Nagai
Preparation of diamondlike carbon films by electron cyclotron resonance chemical vapor deposition
J. Appl. Phys., 67, p.:2890-2893, 1990
M. Yoshikawa, et al
Characterization of Crystalline Quality of Diamond Films by Raman Spectroscopy
Applied Physics Letters, 55(25), 2608 (1989)
Naoto Nagai, M. Yoshikawa et al
FT-IR study on microstructure of diamondlike amorphous carbon films.
Proc. SPIE Int. Soc. Opt. Eng., 1145, p.496-497, 1989
吉川 正信、石田 英之、石谷 炯
表面と微小部分析の実際
PETROTEC 12, 836(1989)
M. Yoshikawa
Raman spectra of diamondlike amorphous carbon films
Mater. Sci. Forum, 52-53, 365 (1989)
M. Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
Solid State Communications, 66, 1177 (1988)
M. Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
Journal of Applied Physics, 64, 6464 (1988)
M. Yoshikawa, et al
Resonant Raman Scattering of Diamondlike Amorphous Carbon Films
Applied Physics Letters, 52, 1639 (1988)
吉川 正信
ダイヤモンド状炭素膜のラマンスペクトル
New Diamond, 4, 16(1988)
M. Yoshikawa, et al
Raman Spectra of NH4-TCNQ-I and -II
Journal of The Physical Society of Japan, Vol.55, No.4, p.1177-1187(1986)
M. Yoshikawa, et al
Raman Spectra of Thin TCNQ Films Deposited on Silver Films
Journal of Raman Spectroscopy, Vol.17, 369-371 (1986)
M. Yoshikawa, et al
Pressure Raman Effect in TCNQ Salts
Solid State Communications, Vol.48, No.1, p.13-16(1983)
＜Proceeding＞
M.Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
Xth International Conference on Raman Spectroscopy
Sept.6, London, UK, 1988
M.Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
1st International Conference on the New Diamond
Oct.24,Tokyo, 1988
M.Yoshikawa, et al
Origin of Raman Bands of a‐C films
XIIth International Conference on Raman Spectroscopy
August l3～l7,USA, 1990
M.Yoshikawa, et al
Determination of Anisotropic Refractive Indices of A Single-Crystal Organic Thin Film by Attenuated Total Reflection Raman Spectroscopy
XIIth International Conference on Raman Spectroscopy
August l3～l7, USA,1990
M.Yoshikawa, et al
Determination of Anisotropic Refractive Indices of A Single-Crystal Organic Thin Film by Attenuated Total Reflection Raman Spectroscopy
XIIth International Conference on Raman Spectroscopy
August l3～l7, USA,1990
M.Yoshikawa, et al
Characterization of carrier and stress distributions in
semiconductor devices by cathodoluminescence spectroscopy and Raman microprobe
Inst. Phys. Conf. Ser. No165, Symposium 1, 2nd Conf. Int. Union Microbeam analysis societies
Kailua-Kona, Hawaii,9-13 July,2000, p27(invited)
M.Yoshikawa, et al
Resonant Raman scattering from Si doped and
N doped a-C:H films
Proceedings of the XVIIIth International Conference on Raman Spectroscopy,
edited by J.Mink, G.Jalsovszky and G.Keresztury (Wiley, England, 2002), p.487.
Yasuhito Aoki, Naoki Mura-ki, Masanobu Yoshikawa
A Micro-Raman Study of Natural Rubber with YAG Laser Excitation
19th International Conference on Raman Spectroscopy
8-13 August, Australia, 2004
T.Hayashi, H.Seki,N.Muraki ,N.Nagai and M.Yoshikawa
Chemical Structure Analysis of OLED device using IR
Microspectroscopy and micro-MS Spectrometry
The Third International Conference on Advanced Vibrational Spectroscopy(ICAVS-3)
USA、2005
Ryuichi Sugie, Keiko Matsuda,Naoto Nagai, Tsuneo Ajioka, Masanobu Yoshikawa,
Toshikazu Mizukoshi, Katsuhiko Shibusawa, and Shoji Yo
Characterization of Crystalline Defects
and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
2005 InternationalConference on Solid State Devices and Materials (SSDM), Japan,2005
M.Yoshikawa, M.Murakami, T.Fujita, K.Inoue, K.Matsuda, H.Ishida and H. Harima
Characterization of V-defects in InGaN single-quantum-well films at nanometer level by high spatial resolution cathodoluminescence spectroscopy
International Conference on Silicon Carbide and Related Materials 2007
Japan, 2005
Masataka Murakami, Keiko Matsuda, Ryuichi Sugie, Masanobu Yoshikawa
Characterization of Silicon nanostructures by Near-Field Raman Spectroscopy
Characterization of Silicon nanostructures by Near-Field Raman Spectroscopy
8/17-24
Brunel University/London,2008
M.Yoshikawa
Characterization of Si by a Tapping Mode-Scanning
Near-Field Optical Raman Microscope (SNORM)
20th International Conference on Raman Spectroscopy
invied speaker, Sep.21-25th, 2006
Y. Aoki, N. Muraki,M. Yoshikawa
Characterization of Nafion membrane using Raman spectroscopy
20th International Conference on Raman Spectroscopy
Sep.21-25th, 2006
K. Matsuda, R. Miyoshi, H. Seki, H. Hashimoto and M. Yoshikawa
Depth analysis of annealed SiOC thin films by Raman Spectroscopy
20th International Conference on Raman Spectroscopy
Sep.21-25th, 2006
K. Inoue, K. Okada, M. Yoshikawa and N. Hasuike, H.Harima
Raman Scattering From Nanometer-Sized Zinc Oxide
20th International Conference on Raman Spectroscopy
Sep.21-25th, 2006
M. Murakami, K. Matsuda, R. Sugie and M. Yoshikawa
Determination of Residual Stress Distribution in Silicon by Near-Field Raman Spectroscopy
20th International Conference on Raman Spectroscopy
Sep.21-25th, 2006
R
yuichi Sugie, Keiko Matsuda, Tsuneo Ajioka, Masanobu Yoshikawa,
Toshikazu Mizukoshi, Katsuhiko Shibusawa, and Shoji Yo
Characterization of Process-Induced Damage in LSI Devices by Cathodoluminescence Spectroscopy
The 16th International Microscopy Congress (IMC16)
9/5札幌コンベンションセンター,2006
M.Yoshikawa, et al
Characterization of V-defects in InGaN single-quantum-well films at nanometer level by high spatial resolution cathodoluminescence spectroscopy
International Conference on Silicon Carbide and Related Materials
October14-19th, 2007
T. Mitani, R. Hattori, M. Yoshikawa
Diffusion of point defects from ion implanted 4H-SiC: Cathodoluminescence observation
European Conference on Silicon Carbide and Related Materials
9/8,Barcelona, 2008
H. Seki, H. Hashimoto, M. Yoshikawa
Characterization of Low-k Films between narrow Cu lines using infrared microscopy
Sixth International Conference on Advanced Vibrational Spectroscopy (ICAVS-6)
6/16, USA, 2011
Ryuichi Sugie, Kensuke Inoue, and Masanobu Yoshikawa
Semi-Quantitative Determination of Radiative Recombination Centers in Silicon Power Devices by Cross-Sectional Cathodoluminescence
SSDM2011 (International Conference on Solid State Devices and Materials 2011), 9/28
Nagoya,Japan, 2011
M.Yoshikawa, et al
Raman Spectra of Diamondlike Amorphous Carbon Films
Xth International Conference on Raman
Spectroscopy
Sept.6, London, UK, 1988
M. Yoshikawa, et al
Characterization of inhomogeneity in SiO2 films on 4H-SiC epitaxial substrate by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy
European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
September 21-25, 2014, Grenoble, France
M.Yoshikawa
Abnormal Raman Spectral Variation with Excitation Eavelength in Boron-doped Single-crystalline Diamond
16th International Conference on Silicon Carbide and Related Materials
Italy, October 4 - 9, 2015
M.Yoshikawa, K. Inoue, J. Sameshima, and H. Seki
Characterization of inhomogeneity in thermal oxide SiO2 films on 4H-SiC epitaxial substrates by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017).
USA, Washington, D.C, September 17–22, 2017
M.Yoshikawa, Y. Fujita, M. Murakami, K. Inoue, J. Sameshima, and H. Seki
Stress characterization of 4H-SiC epitaxial substrates by scanning near-field optical Raman microscope, with 250-nm spatial resolution
European Conference on Silicon Carbide and Related Materials (ECSCRM)
UK, Birmingham, September 2–7, 2018.
M.Yoshikawa, Y. Fujita, and M. Murakami
Characterization of Inhomogeneity in Thermal Oxide Films on 4H-SiC Epitaxial Substrates by a Combination of Infrared, Raman and Cathodoluminescence Spectroscopy
Energy Materials and Nanotechnology 2018 (Invited speaker)
Austria, Vienna, June18 –22, 2018
M.Yoshikawa, and N. Kawasaki
Defect characterization of GaN by SEM-CL and STEM-CL
Energy Materials and Nanotechnology Barcelona Meeting on Semiconductor(Invited speaker)
Spain, Barcelona, August 19-23, 2019
M.Yoshikawa, K. Inoue, Y. Fujita, and M. Murakami
Characterization of Inhomogeneity at the Interface between SiO2 and 4H-SiC Substrate by Infrared, Raman and Cathodoluminescence Spectroscopy
International Conference on Advanced Materials Science and Engineering (AMSE) (Invited speaker)
Vienna, Austria, July 22-25, 2020.
＜著書（共著）リスト＞
書誌情報
Raman, infrared and cathodoluminescence spectroscopy of advanced semiconductors and related materials
2023年, Springer, 2023
“Raman, infrared and cathodoluminescence spectroscopy of advanced semiconductors and related materials”, edited by M.Yoshikawa, (cambridgescholars.com, UK, 2021)
「合成高分子赤外・ラマン分光法」
2014年12月
講談社
ラマン分光法（講談社）
2014年12月
講談社
薄膜の評価技術ハンドブック
2013年1月
テクノシステム
分析化学実技シリーズ「表面分析」
2011年8月
共立出版
化合物半導体大全
2009年
電子ジャーナル
Handbook of Vibrational Spectroscopy
2002年
“Handbook of Vibrational Spectroscopy”, edited by J.M.Chalmers and P.R.Griffiths, (Wiley, Chichester, 2002), p.259
ＬＥＤ照明の高効率化プロセス・材料技術と応用展開
2010年
サイエンス＆テクノロジー
樹脂の硬化度・硬化挙動の測定と評価方法
2007年
サイエンス＆テクノロジー
表面・界面工学大系[上巻] 基礎編
2005年
フジ・テクノシステム
粉体分析講座－ラマン分光分析－
1999年
アィ・ティー・アイ
実用分光法シリーズ(3)ラマン分光法
1998年
株式会社アイピーシー
膜形成技術用語辞典
1996年
工業調査会
Raman Spectra of Diamondlike Amorphous Carbon Films
1990年
Properties and Characterization of Amorphous Carbon Films ed.by J.J.Pouch and S.A.Alterovitz 52&53, p.365 (Materials Science Forum)
＜特許出願リスト＞
発明者
発明の名称
公開番号
分析方法およびそれを具備する分析装置
特開2016-145802
特願2015-022840（PCT出願）
WO2016129152A1
近接場プローブの作製方法
特開2010-217135
光分析装置および分光分析方法
特開2009-204559
カソードルミネッセンス装置及びそれを用いた分析方法
特開2008-249478
「赤外顕微鏡装置および分光分析方法」
特開2008-258097
試料の応力または歪みを測定する方法
特開2007-147607
共鳴ラマン散乱測定による分析方法
特開2006-052965